| HS编码 | 商品名称 | 退税率 | 计量单位 | 海关监管 | 申报要素·检疫 | 编码对比 |
| 38180012.00 (增) | 7.5cm≤直径≤15.24cm，厚度在220微米 以上的单晶硅片
[Monocrystalline silicon wafers with a diameter of 7.5 cm ≤ diameter ≤ 15.24 cm and a thickness of more than 220 microns] |
千克/片 | 查看详情 | -- | ||
| 38180013.00 (增) | 7.5cm≤直径≤15.24cm，厚度在220微米及以下的单晶硅片
[Monocrystalline silicon wafers with a diameter of 7.5 cm ≤ diameter ≤ 15.24 cm and a thickness of 220 microns or less] |
千克/片 | 查看详情 | 对比-38180012.00 | ||
| 38180014.10 (增) | 厚度在220微米 以上的经掺杂用于电子工业的单晶硅切片，直径超过15.24厘米，但小于20.32厘米
[Doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns, diameter exceeding 15.24 cm but less than 20.32 cm] |
千克/片 | 查看详情 | 对比-38180013.00 | ||
| 38180014.20 (增) | 厚度在220微米 以上的经掺杂用于电子工业的单晶硅切片，直径在20.32厘米及以上，但小于30.48厘米
[Doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns, diameter of 20.32 cm or more but less than 30.48 cm] |
千克/片 | 查看详情 | 对比-38180014.10 | ||
| 38180014.90 (增) | 厚度在220微米 以上的其他经掺杂用于电子工业的单晶硅切片
[Other doped monocrystalline silicon wafers for electronic industry with a thickness of more than 220 microns] |
千克/片 | 查看详情 | 对比-38180014.20 | ||
| 38180015.10 (增) | 厚度在220微米及以下的经掺杂用于电子工业的单晶硅切片，直径超过15.24厘米，但小于20.32厘米
[Doped monocrystalline silicon wafers for electronic industry with a thickness of 220 microns or less, diameter exceeding 15.24 cm but less than 20.32 cm] |
千克/片 | 查看详情 | 对比-38180014.90 | ||
| 38180015.20 (增) | 厚度在220微米及以下的经掺杂用于电子工业的单晶硅切片，直径在20.32厘米及以上，但小于30.48厘米
[Single crystal silicon slices doped for use in the electronics industry with a thickness of 220 micrometers or less, with a diameter of 20.32 cm or more but less than 30.48 cm] |
千克/片 | 查看详情 | 对比-38180015.10 | ||
| 38180015.90 (增) | 厚度在220微米及以下的其他经掺杂用于电子工业的单晶硅切片
[Other single crystal silicon slices doped for use in the electronics industry with a thickness of 220 micrometers or less] |
千克/片 | 查看详情 | 对比-38180015.20 | ||
| 38180090.21 (增) | 经掺杂用于电子工业的碲化镉、碲化镉锌或碲化镉汞
[Doped telluride, cadmium zinc telluride, or cadmium mercury telluride for use in the electronics industry] |
13% | 千克/ | 3 | 查看详情 | 对比-38180015.90 |
| 38180090.20 | 经掺杂用于电子工业的氮化镓、氧化镓、磷化镓、砷化镓、铟镓砷、硒化镓、锑化镓、磷锗锌、二氧化锗、四氯化锗
[Doped gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphorous germanium zinc, germanium dioxide, and germanium tetrachloride for electronic industry] |
13% | 千克/ | 3 | 查看详情 | 对比-38180090.21 |
| 38180090.90 | 其他经掺杂用于电子工业的化学元素，已切成圆片、薄片或类似形状；其他经掺杂用于电子工业的化合物
[Other chemical elements doped for use in the electronics industry, cut into circular, thin, or similar shapes; Other compounds doped for use in the electronics industry] |
13% | 千克/ | 查看详情 | 对比-38180090.20 | |
| 38180011.00
(已作废)
推荐查询: 38180011 或者： 381800 |
7.5cm≤直径≤15.24cm单晶硅片
[Monocrystalline sillicon, in the form of discs, wafers or similar form, diameter 7.5cm or more but not exceeding 15.24cm, chemical compounds doped for use in electronics] |
13% | 千克/片 | 查看详情 | 对比-38180090.90 | |
| 38180019.00
(已作废)
推荐查询: 38180019 或者： 381800 |
直径〉15.24cm的单晶硅片
[Monocrystalline sillicon, in the form of discs, wafers or similar form, diameter exceeding 15.24cm, chemical compounds doped for use in electronics] |
13% | 千克/片 | 无 | 查看详情 | 对比-38180011.00 |
| 38180019.10
(已作废)
推荐查询: 38180019 或者： 381800 |
经掺杂用于电子工业的单晶硅切片，直径超过15.24厘米，但小于20.32厘米
[Single crystal silicon slices doped for the electronics industry, with a diameter exceeding 15.24 centimeters but less than 20.32 centimeters] |
9% | 千克/片 | 查看详情 | 对比-38180019.00 | |
| 38180019.20
(已作废)
推荐查询: 38180019 或者： 381800 |
经掺杂用于电子工业的单晶硅切片，直径在20.32厘米及以上，但小于30.48厘米
[Single crystal silicon slices doped for the electronics industry, with a diameter of 20.32 centimeters or more but less than 30.48 centimeters] |
9% | 千克/片 | 查看详情 | 对比-38180019.10 | |
| 38180019.90
(已作废)
推荐查询: 38180019 或者： 381800 |
其他经掺杂用于电子工业的单晶硅切片
[Other doped monocrystalline silicon slices used in the electronics industry] |
9% | 千克/片 | 查看详情 | 对比-38180019.20 | |
| 38180090.00
(已作废)
推荐查询: 38180090 或者： 381800 |
其他经掺杂用于工业的晶体切片
[Other monocrystalline sillicon, in the form of discs, wafers or similar form, chemical compounds doped for use in electronics] |
13% | 千克/无 | 无 | 查看详情 | 对比-38180019.90 |
| 38180090.01
(已作废)
推荐查询: 38180090 或者： 381800 |
经掺杂用于电子工业的氮化镓 | 13% | 千克/无 | 3 | 查看详情 | 对比-38180090.00 |
| 38180090.02
(已作废)
推荐查询: 38180090 或者： 381800 |
经掺杂用于电子工业的氧化镓 | 13% | 千克/无 | 3 | 查看详情 | 对比-38180090.01 |
| 38180090.03
(已作废)
推荐查询: 38180090 或者： 381800 |
经掺杂用于电子工业的磷化镓 | 13% | 千克/无 | 3 | 查看详情 | 对比-38180090.02 |